View ZXMC3F31DN8TA_1598265.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

issue 1 - september 2008 1 ? diodes incorporated 2008 www.zetex.com www.diodes.com zxmc3f31dn8 30v so8 complementary dual enhancement mode mosfet summary device v (br)dss (v) q g (nc) r ds(on) ( ) i d (a) 0.024 @ v gs = 10v 7.3 q1 30 12.9 0.039 @ v gs = 4.5v 5.7 0.045 @ v gs = -10v 5.3 q2 -30 12.7 0.080 @ v gs = -4.5v 4 description this new generation trench mosfet from zetex has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance making it ideal for power management and battery charging functions. features ? low on-resistance ? 4.5v gate drive capability ? low profile soic package applications ? dc-dc converters ? smps ? load switching switches ? motor control ? backlighting ordering information device marking zxmc 3f31 device reel size (inches) tape width (mm) quantity per reel ZXMC3F31DN8TA 7 12 500 d2 s2 g2 d1 q1 n-channel q2 p-channel s1 g1 d1 s1 g1 s2 g2 top view n p d1 d2 d2
zxmc3f31dn8 absolute maximum ratings parameter symbol n- channel q1 p- channel q2 unit drain-source voltage v dss 30 -30 v gate-source voltage v gs 20 20 v continuous drain current @ v gs = 10v; t a =25 c (b)(d) @ v gs = 10v; t a =70 c (b)(d) @ v gs = 10v; t a =25 c (a)(d) @ v gs = 10v; t a =25 c (a)(e) @ v gs = 10v; t l =25 c (f)(d) i d 7.3 5.9 5.7 6.8 7.8 5.3 4.3 4.1 4.9 5.7 a pulsed drain current (c) i dm 33 23 a continuous source current (body diode) (b)(d) i s 3.5 3.2 a pulsed source current (body diode) (c)(d) i sm 33 23 a power dissipation at t a =25 c (a)(d) linear derating factor p d 1.25 10 w mw/ c power dissipation at t a =25 c (a)(e) linear derating factor p d 1.8 14 w mw/ c power dissipation at t a =25 c (b)(d) linear derating factor p d 2.1 17 w mw/ c power dissipation at t l =25 c (f) (d) linear derating factor p d 2.35 19 w mw/ c operating and storage temperature range t j , t stg -55 to 150 c thermal resistance parameter symbol value unit junction to ambient (a)(d) r ja 100 c/w junction to ambient (a)(e) r ja 70 c/w junction to ambient (b)(d) r ja 60 c/w junction to lead (f) (d) r jl 53 c/w notes: (a) for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 2oz copper, in still air conditions. (b) mounted on fr4 pcb measured at t 10 sec. (c) repetitive rating on 25mm x 25mm fr4 pcb, d=0.02, pulse width 300us ? pulse width limited by maximum junction temperature. (d) for a device with one active die. (e) for a device with two active die running at equal power. (f) thermal resistance from junction to so lder-point (at the end of the drain lead). issue 1 - september 2008 2 ? diodes incorporated 2008 www.zetex.com www.diodes.com
zxmc3f31dn8 thermal characteristics 0.1 1 10 10m 100m 1 10 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 100 1m 10m 100m 1 10 100 1k 1 10 100 0.1 1 10 10m 100m 1 10 note (a)(d) 100us 100ms 1s r ds(on) limited 1ms n-channel safe operating area npn @ single pulse, t amb =25c dc 10ms i d drain current (a) v ds drain-source voltage (v) one active die two active die derating curve max power dissipation (w) temperature (c) d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) single pulse t amb =25c pulse power dissipation maximum power (w) pulse width (s) note (a)(d) pnp @ single pulse, t amb =25c 1s dc 100us 1ms 10ms 100ms r ds(on) limited p-channel safe operating area -v ds drain-source voltage (v) -i d drain current (a) issue 1 - september 2008 3 ? diodes incorporated 2008 www.zetex.com www.diodes.com
zxmc3f31dn8 q1 n-channel electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss 30 v i d = 250 a, v gs =0v zero gate voltage drain current i dss 0.5 a v ds =30v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) 1.0 3.0 v i d = 250 a, v ds =v gs static drain-source on-state resistance ( * ) r ds(on) 0.024 0.039 ? v gs = 10v, i d = 7.0a v gs = 4.5, i d = 6.0a forward transconductance ( * ) (?) g fs 16.5 s v ds = 15v, i d = 7.0a dynamic (?) input capacitance c iss 608 pf output capacitance c oss 132 pf reverse transfer capacitance c rss 72 pf v ds = 15v, v gs =0v f=1mhz switching (?) (?) turn-on-delay time t d(on) 2.9 ns rise time t r 3.3 ns turn-off delay time t d(off) 16 ns fall time t f 8 ns v dd = 15v, v gs =10v i d = 1a r g ? 6.0 , total gate charge q g 12.9 nc gate-source charge q gs 2.5 nc gate-drain charge q gd 2.52 nc v ds = 15v, v gs = 10v i d = 7a source?drain diode diode forward voltage ( * ) v sd 0.82 1.2 v i s = 1.7a,v gs =0v reverse recovery time (?) t rr 12 ns reverse recovery charge (?) q rr 4.8 nc i s = 2.2a,di/dt=100a/ s notes: (*) measured under puls ed conditions. pulse width 300 s; duty cycle 2%. (?)switching characteristics are independent of operating junction temperature. (?)for design aid only, not subject to production testing issue 1 - september 2008 4 ? diodes incorporated 2008 www.zetex.com www.diodes.com
zxmc3f31dn8 q1 typical characteristics 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 234 0.1 1 10 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1e-3 0.01 0.1 1 10 4v 5v 10v 3.5v 2.5v output characteristics t = 25c 3v v gs i d drain current (a) v ds drain-source voltage (v) 10v 1.5v 2v 2.5v 4v 3.5v 3v output characteristics t = 150c v gs i d drain current (a) v ds drain-source voltage (v) typical transfer characteristics v ds = 10v t = 25c t = 150c i d drain current (a) v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = 10v i d = 7a v gs( th) v gs = v ds i d = 250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 10v 3.5v 4v 3v on-resistance v drain current t = 25c 2.5v 4.5v v gs r ds(on) drain-source on-resistance (w) i d drain current (a) vgs = -3v t = 150c t = 25c source-drain diode forward voltage v sd source-drain voltage (v) i sd reverse drain current (a) issue 1 - september 2008 5 ? diodes incorporated 2008 www.zetex.com www.diodes.com
zxmc3f31dn8 q1 typical characteristics ?cntd. 11 0 0 100 200 300 400 500 600 700 800 900 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) v ds - drain - source voltage (v) 01234567891011121314 0 1 2 3 4 5 6 7 8 9 10 i d = 7a v ds = 15v gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) v gs gate-source voltage (v) test circuits issue 1 - september 2008 6 ? diodes incorporated 2008 www.zetex.com www.diodes.com
zxmc3f31dn8 q2 p-channel electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss -30 v i d = -250 a, v gs =0v zero gate voltage drain current i dss -5.0 a v ds =-30v, v gs =0v gate-body leakage i gss -100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) -1.0 -3.0 v i d = -250 a, v ds =v gs static drain-source on-state resistance ( * ) r ds(on) 0.045 0.080 ? v gs = -10v, i d = -5.0a v gs = -4.5v, i d = -4.0a forward transconductance ( * ) (?) g fs 14 s v ds = -15v, i d = -5.0a dynamic (?) input capacitance c iss 670 pf output capacitance c oss 126 pf reverse transfer capacitance c rss 70 pf v ds = -15v, v gs =0v f=1mhz switching (?) (?) turn-on-delay time t d(on) 1.9 ns rise time t r 3 ns turn-off delay time t d(off) 30 ns fall time t f 21 ns v dd = -15v, v gs =-10v i d = -1a r g ? 6.0 , total gate charge q g 12.7 nc gate-source charge q gs 2 nc gate-drain charge q gd 2.4 nc v ds = -15v, v gs = -10v i d = -5a source?drain diode diode forward voltage ( * ) v sd -0.82 -1.2 v i s = -2a,v gs =0v reverse recovery time (?) t rr 16.5 ns reverse recovery charge (?) q rr 11.5 nc i s = -2.1a,di/dt=100a/ s notes: (*) measured under puls ed conditions. pulse width 300 s; duty cycle 2%. (?)switching characteristics are independent of operating junction temperature. (?)for design aid only, not subject to production testing issue 1 - september 2008 7 ? diodes incorporated 2008 www.zetex.com www.diodes.com
zxmc3f31dn8 typical characteristics 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.1 1 10 2.0 2.5 3.0 3.5 0.1 1 10 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 0.01 0.1 1 10 0.20.40.60.81.0 1e-3 0.01 0.1 1 10 4.5v 2.5v 10v 3.5v 4v output characteristics t = 25c 3v v gs -i d drain current (a) -v ds drain-source voltage (v) 4v 10v 2.5v 2v 3.5v 3v output characteristics t = 150c v gs -i d drain current (a) -v ds drain-source voltage (v) typical transfer characteristics v ds = 10v t = 25c t = 150c -i d drain current (a) -v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = 10v i d = 5a v gs( th) v gs = v ds i d = 250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 4.5v 2.5v 10v 3.5v 4v 3v on-resistance v drain current t = 25c v gs r ds(on) drain-source on-resistance ( ) -i d drain current (a) vgs = 0v t = 150c t = 25c source-drain diode forward voltage -v sd source-drain voltage (v) -i sd reverse drain current (a) issue 1 - september 2008 8 ? diodes incorporated 2008 www.zetex.com www.diodes.com
zxmc3f31dn8 typical characteristics 11 0 0 200 400 600 800 1000 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) -v ds - drain - source voltage (v) 0 5 10 15 0 1 2 3 4 5 6 7 8 9 10 i d = 5a v ds = 15v gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) -v gs gate-source voltage (v) test circuits issue 1 - september 2008 9 ? diodes incorporated 2008 www.zetex.com www.diodes.com
zxmc3f31dn8 package outline so8 so8 package information inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.053 0.069 1.35 1.75 e 0.050 bsc 1.27 bsc a1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 d 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 h 0.228 0.244 5.80 6.20 u 0 8 0 8 e 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 l 0.016 0.050 0.40 1.27 - - - - - note: controlling dimensions are in inches. approximate dimensions are provided in millimeters issue 1 - september 2008 10 ? diodes incorporated 2008 www.zetex.com www.diodes.com
zxmc3f31dn8 definitions product change diodes incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any p roduct or service. customers are solely responsible for obtaining the latest relevant information before placing orders. applications disclaimer the circuits in this design/application note ar e offered as design ideas. it is the res ponsibility of the user to ensure that t he circuit is fit for the user?s application and meets with the user?s requirements. no representation or warr anty is given and no liability whatsoever i s assumed by diodes inc. with respect to the accuracy or use of such information, or infringem ent of patents or other intellectual property rights arising from such use or otherwise. diodes inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, re striction or otherwise) for any damages, loss of profit, business, contract, opportuni ty or consequential loss in the use of these circuit applications, under any circumstances. life support diodes zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably ex pected to result in signif icant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expecte d to cause the failure of the life support device or to affect its safe ty or effectiveness. reproduction the product specifications contained in th is publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. terms and conditions all products are sold subjects to diodes inc. terms and conditions of sale, and this disclaimer (save in the event of a conflic t between the two when the terms of the contract shall prevail) according to region, supplied at the ti me of order acknowledgement. for the latest information on technology, delivery terms and conditions and prices, please contact your nearest diodes zetex sa les office. quality of product diodes zetex semiconductors limit ed is an iso 9001 and ts16949 certified semiconductor manufacturer. to ensure quality of service and products we strongly advise the purchase of parts dire ctly from zetex semiconductors or one of our regionally authorized distributors. for a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com diodes incorporated does not warrant or accept any liability what soever in respect of any parts purchased through unauthorized sales channels. esd (electrostatic discharge) semiconductor devices are susceptible to damage by esd. suitable precautions should be taken when handling and transporting dev ices. the possible damage to devices depends on the circum stances of the handling and transporting, and the nature of the device. the ext ent of damage can vary from immediate functional or parametric malfunction to de gradation of function or performance in use over time. device s suspected of being affected should be replaced. green compliance diodes zetex semiconductors is committed to environmental excelle nce in all aspects of its operat ions which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. numerous successful programs have been implemented to reduce the use of hazardous substanc es and/or emissions. all diodes zetex components are compliant with the rohs directive, and through this it is supporting its customers in their com pliance with weee and elv directives. product status key: ?preview? future device intended for production at some point. samples may be available ?active? product status recommended for new designs ?last time buy (ltb)? device will be discontinued and last time buy period and delivery is in effect ?not recommended for new designs? device is still in production to support existing designs and production ?obsolete? production has been discontinued datasheet status key: ?draft version? this term denotes a very early dat asheet version and contains highly provisional information, which may change in any manner without notice. ?provisional version? this term denotes a pre-release datasheet. it provides a clear indication of anticipated performance. however, changes to the test conditions and specificat ions may occur, at any time and without notice. ?issue? this term denotes an issued datasheet contai ning finalized specifications. however, changes to specifications may occur, at any time and without notice. diodes zetex sales offices europe zetex gmbh kustermann-park balanstra?e 59 d-81541 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific diodes zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters diodes incorporated 15660 n. dallas parkway suite 850, dallas tx75248, usa telephone (1) 972 385 2810 www.diodes.com ? 2008 published by diodes incorporated issue 1 - september 2008 11 ? diodes incorporated 2008 www.zetex.com www.diodes.com

▲Up To Search▲

Price & Availability of ZXMC3F31DN8TA

	To Download ZXMC3F31DN8TA Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .